Thin film transistor and manufacturing method thereof

ABSTRACT

The present invention provides a structure of the TFT in which a current-voltage characteristic can be improved. The present invention refers to a thin film transistor comprising a lamination layer wherein a first conductive film, a first insulating film and a second conductive film are sequentially laminated, a semiconductor film formed so as to be in contact with the side surface of the lamination layer, and a third conductive film covering the semiconductor film through a second insulating film. The first conductive film and the second conductive film are a source electrode and a drain electrode, and a region which is in contact with the first insulating film and the third conductive film is a channel forming region in semiconductor film, and the third conductive film is a gate electrode.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to an effective technique for a method formanufacturing a thin film transistor (TFT) formed by laminating asemiconductor film and an insulating film over a substrate having aninsulating surface. In addition, the present invention relates to aneffective technique for a method for manufacturing a thin filmtransistor having a short-channel structure.

2. Description of the Related Art

In late years, a TFT has been formed by means of a semiconductor thinfilm (thickness of around several to several hundreds) formed over asubstrate having an insulating surface, and development of asemiconductor device having a large area integrated circuit comprisingthis TFT has been advanced. Au active matrix liquid crystal displaydevice, an EL display device, and a contact type image sensor are knownas the representative example. Besides, a system on panel provided witha CPU, a DRAM, an image processing circuit, a speech processing circuitin addition to a pixel portion and a drive circuit portion on the samesubstrate is proposed. In particular, because field-effect mobility ishigh in a TFT using a crystalline silicon film as an active region, acircuit comprising various functions (for example, a pixel circuit fordisplaying an image, drive circuits such as a shift register circuit, alevel shifter circuit, a buffer circuit, a sampling circuit forcontrolling the pixel circuits, a CPU, a SRAM, an image processingcircuit, and a speech processing circuit, can be formed by using theTFT.

FIG. 10 shows a current-voltage characteristic (I_(d)-V_(d)characteristic) of a TFT. In addition, a graph of the current-voltagecharacteristic of the TFT as shown in FIG. 10 shows a current magnitudeI_(d) flowing to a drain region of the TFT to V_(d) which is a voltagebetween a source region and a drain region. FIG. 10 is a plurality ofgraphs showing various value of V_(g) that is a voltage between a sourceregion and a drain region of the TFT.

As shown in FIG. 10, the current-voltage characteristic of the TFT isdivided into two regions by value of V_(g) and V_(d). The region of|V_(g)-V_(th)|<|V_(d)| shows a saturation region, and the region of|V_(g)-V_(th)|>|V_(d)| shows a linear region.

The following formula 1 holds in a saturation region.

$\begin{matrix}{I_{d} = {\frac{W}{2L}\mu \; {C_{OX}( {V_{g} - V_{th}} )}^{2}}} & \lbrack {{Formula}\mspace{14mu} 1} \rbrack\end{matrix}$

In addition, μ means mobility of the TFT, C_(ox) means capacitance of agate insulating film per a unit area, and W/L means a ratio of achannel-width W and a channel-length L in a channel forming region.

On the other hand, the following formula 2 holds in the linear region.

$\begin{matrix}{I_{d} = {\mu \; C_{OX}\frac{W}{L}\{ {{( {V_{g} - V_{th}} )V_{d}} - \frac{V_{d}^{2}}{2}} \}}} & \lbrack {{Formula}\mspace{14mu} 2} \rbrack\end{matrix}$

According to the formula 2, it can be thought that performance of theTFT in the linear region can be improved by means of the gatecapacitance (C_(ox)) and the ratio of the channel-width and thechannel-length (W/L).

To make the capacitance (C_(ox)) of the gate insulating film increasedis conceivable as the first remedy. Specifically, there are techniquessuch as raising relative permittivity of the gate insulating film,making the film thickness thin, improving interfacial quality of asemiconductor layer and a gate insulating film, and the like (forexample, Reference 1, Japanese Patent Laid-Open No. 2000-275678)

To make the ratio of the channel-width and the channel-length (W/L)further enlarged is conceivable as the second remedy. In other words,the channel width (W) of the TFT is to be magnified or thechannel-length (L) is to be reduced.

SUMMARY OF THE INVENTION

However, there is a problem that an area of the TFT becomes larger whenthe channel width (W) is enlarged for making the W/L ratio increase.When the TFT is used as a switching element of the pixel in thetransmissive display device, there is at least a TFT in the pixel whichserves as a display portion. Accordingly, when the area of the TFTbecomes larger, a display area of a pixel portion becomes narrow, andthere is a problem that an aperture ratio of display device is reduced.

In addition, when the area of the TFT becomes larger, the area of thesemiconductor layer covered with the gate electrode of the TFT isincreased. Therefore, there are problems that parasitic capacitanceoccurs between the semiconductor film and the gate electrode, andoperating frequency is dropped, as a consequence, high speed action isnot possible.

Besides, when the area of the TFT becomes larger, an area of a circuitusing the TFT is increased, and volume of electronic apparatus havingthe circuit is increased. As a result, a miniaturized and thinelectronic apparatus can not be realized.

On the other hand, there are techniques to narrow the channel-length,that is to say, a technique to narrow the length of the gate electrodeto increase a W/L ratio. As for this technique, there are limitations tonarrow the channel-length by the following problem: a limitation ofminiaturization in exposure equipment used to form a resist mask; alimitation of position alignment precision of a metal mask used to forma resist mask; a limitation to suppress a difference in dimension of themetal mask and finished dimension of the resist mask; and a limitationto suppress a gap by the resist mask and real etching (whether narrowspacing can be surely etched).

Thus, the present invention provides a step in which a channel-length ofa TFT be controlled with higher reproducibility. In addition, thepresent invention provides a step in which a short channel-length of theTFT can be manufactured. Further, the present invention provides astructure of the TFT in which a current-voltage characteristic can beimproved.

In addition, the present invention provides structures of a TFT with asmall seizure area, a semiconductor integrated circuit having the TFT,and a display device including the TFT and which can improve an apertureratio.

The present invention relates to a thin film transistor comprising alamination layer which is formed by laminating a first conductive film,a first insulating film, and a second conductive film in sequence on aninsulating surface, a semiconductor film which is formed so as to be incontact with side surfaces of the lamination layer, and a thirdconductive film for covering the semiconductor film through a secondinsulating film. The first conductive film and the second conductivefilm are a source electrode and a drain electrode, respectively, a partbeing in contact with the first insulating film and the third conductivefilm in the semiconductor film is a channel forming region, and thethird conductive film is a gate electrode.

The second insulating film is a gate insulating film. The gate electrodecovers at least a semiconductor film. On the other hand, the gateelectrode may cover a part of the semiconductor film which is in contactwith the first insulating film.

In addition, the first conductive film, the first insulating film, andthe second conductive film are laminated in a lengthwise direction ofthe insulating surface.

The present invention relates to a thin film transistor comprising alamination layer which is formed by laminating a conductive film and aninsulating film alternately on an insulating surface, a semiconductorfilm formed on side surfaces of the lamination layer, and a secondconductive film covering the semiconductor film through a secondinsulating film. In the conductive films of the lamination layer, aconductive film which is in contact with an insulating surface and aconductive film which is most away from the conductive film are a sourceelectrode and a drain electrode, respectively. In the semiconductorfilm, a part which is in contact with the insulating film of thelamination layer and the conductive film of the lamination layer, andthe second conductive film is a channel forming region. Further, thesecond conductive film is a gate electrode.

The gate electrode covers at least the semiconductor film through theinsulating film. On the other hand, the gate electrode may cover a partof the semiconductor film through the insulating film. The semiconductorfilm is in contact with the insulating film and the conductive film ofthe lamination layer.

In addition, the conductive film and insulating film of the laminationlayer are formed alternately in a lengthwise direction of the insulatingsurface.

The thin film transistor of the present invention can control thechannel-length by the film thickness of the insulating film being incontact with the semiconductor film. Accordingly, conventional problemsin process for manufacturing the TFT with a short-channel structure canbe solved. And it becomes easier to manufacture the TFT with theshort-channel structure.

In addition, it is preferable for at least a part of the side surface ofthe lamination layer to be slanted to the insulating surface. Accordingto this structure, the semiconductor film is formed with highercoatability, and the semiconductor film is prevented from being cut.

In addition, the channel forming region of the semiconductor film may bean closed contour shape. In this case, the W/L ratio can be increasedsince it is able to widen the channel-width (W). In other words, acurrent-voltage characteristic of the TFT can be improved.

In addition, when the gate electrode covers a part of the semiconductorfilm through the insulating film, an area of the TFT can be reduced.Therefore, when this TFT is used in a transmissive display device, anaperture ratio can be improved.

When the second conductive film and the second insulating film areetched, the source electrode or the drain electrode are over-etched forexposing one part thereof. According to this step, the film thickness ofthe central part of the source electrode or the drain electrode differsfrom that of the edge portion thereof. By this structure, a contact areaof the semiconductor film with the source electrode or the drainelectrode is increased, and the contact property can be raised.

According to the present invention, a TFT having an active region can beformed at the side of an insulating film and a pair of conductive filmsprovided through the insulating film. The TFT according to the presentinvention can control a channel-length by controlling the film thicknessof the insulating film sandwiched between the conductive films. Becauseof this, it becomes easier to manufacture the thin film transistorhaving the short channel-length because of easily controlling thechannel-length in comparison with the conventional step. In other words,because it is easier to increase a W/L ratio, a current-voltagecharacteristic can be raised and a characteristic of the TFT can beimproved.

Since each electrode is overlapped with one another, the area occupiedby the TFT can be made small, and further, when the TFT is used in atransmissive display device, an aperture ratio can be raised.

These and other object, features and advantage of the present inventionwill become more apparent upon reading of the following detaileddescription along with the accompanied drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A and 1B are schematic diagrams of a structure of a TFT of thepresent invention;

FIGS. 2A and 2B are schematic diagrams of a structure of a TFT of thepresent invention;

FIGS. 3A and 3B are schematic diagrams of a structure of a TFT of thepresent invention;

FIGS. 4A and 4B are schematic diagrams of a structure of a TFT of thepresent invention;

FIGS. 5A and 5B are diagrams showing a manufacturing step of a TFT ofthe present invention;

FIGS. 6A and 6B are diagrams showing a manufacturing step of a TFT ofthe present invention;

FIGS. 7A and 7B are diagrams showing a manufacturing step of a TFT ofthe present invention;

FIGS. 8A and 8B are diagrams showing a manufacturing step of a TFT ofthe present invention;

FIGS. 9A and 9B are diagrams showing a manufacturing step of a TFT ofthe present invention;

FIG. 10 is a diagram showing a current-voltage characteristic of a TFT;

FIGS. 11A to 11C are diagrams showing a manufacturing step of a TFT ofthe present invention;

FIGS. 12A and 12B are schematic diagrams of a structure of a TFT of thepresent invention.

DETAILED DESCRIPTION OF THE INVENTION

Hereinafter, the embodiment modes of the present invention are describedwith reference to the drawings. However, the present invention can becarried out in many different modes. And it is easily understood bythose skilled in the art that the mode and the detail of the presentinvention can be variously changed without departing from the purposeand the scope of the invention. Therefore, the interpretation is notlimited to the description of the embodiment modes in the presentinvention.

For example, in this embodiment modes, a TFT in a pixel portion isexplained as a representative example. Because of this, a conductivefilm which is formed in a contact hole and is connected to a firstelectrode or a second electrode (a region 111 in FIG. 1, a region 211 inFIG. 2, a region 313 in FIG. 3, a region 411 in FIG. 4, a region 1111 inFIG. 11, a region 1211 in FIG. 12) is described as a pixel electrode. Itis not limited to this description, and the pixel electrode can beconstrued as a wiring.

In addition, as a representative example in each embodiment mode, a sidesurface of a lamination layer comprising a first conductive film, asecond insulating film, and a second conductive film, namely, a regionwhere a semiconductor film is formed has a structure includinginclination to the insulating surface, but the structure is not limitedto this. The side surface of the lamination layer may be perpendicularto the insulating surface. In this case, the first conductive film, thesecond insulating film, and the second conductive film can be etched byone mask, therefore, the number of the masks can be reduced.

Embodiment Mode 1

This embodiment mode is described with reference to FIGS. 1A and 1B.FIG. 1A is a top view of a TFT manufactured according to this embodimentmode, and FIG. 1B is a cross-sectional view of the TFT manufacturedaccording to this embodiment mode. At first, after forming a firstinsulating film 102 over a substrate 101, a first conductive film isformed. The first conductive film is etched into a desired shape, and afirst electrode 103 is formed. In addition, the first electrode extendsfrom a first connection wiring 112. In this embodiment mode, the firstconnection wiring is assumed to be a source wiring.

A glass substrate, a quartz substrate, a resin substrate such asplastics, a silicon substrate, a metal substrate or the like can be usedfor a substrate material. Besides, a thin film or a flexible member maybe used as a substrate.

A silicon oxide film, a silicon oxynitride film, a silicon nitride film,an aluminum nitride film, a DLC (diamond like carbon) are noted as thefirst insulating film. For a method for manufacturing the firstinsulating film, a known technique such as CVD, sputtering, or vapordeposition can be used. The insulating film serves to prevent impuritieswhich pass through the substrate (metal ion, moisture, oxygen, and thelike.) from scattering and penetrating an element formed over an upperpart of the substrate. In the case where the quartz substrate is usedfor the substrate, the insulating film is not required to be formed. Inthis embodiment mode, the insulating film is formed with a thickness offrom 10 nm to 200 nm. In FIGS. 1A and 1B, a base film is one layer, butit may be at least one layer.

A film formed of a material which performs ohmic contact to asemiconductor film to be formed later is used for the first conductivefilm. Typically, a film formed of a metal such as gold, platinum,chromium, palladium, aluminum, indium, molybdenum, nickel, tungsten,titanium, tantalum and the like, or an alloy thereof is used to form thefirst conductive film by using CVD, sputtering, vapor deposition, or thelike. In addition, a conductive paste using a material of the metal orthe alloy, a conductive polymer film (typically, poly 3,4-(ethylenedioxythiophene) (PEDOT), ITO and the like may be formed by usingprinting and roll coating.

Next, a second insulating film 104 and a second conductive film aresequentially formed on the first conductive film. For the secondinsulating film, a silicon oxide film, a silicon oxynitride film, asilicon nitride film which are formed by a sputtering, CVD, a siliconoxide film (SOG: Spin on Glass), Boro-phosphosilicate Glass (BPSG),Phosphosilicate Glass (PSG), an acrylic resin, a polyimide resin, apolyamide resin, a phenoxy resin, nonaromatic polyfunctional isocyanato,a melamine resin which are formed by application, tantalum oxide,titanium oxide, aluminium oxide, DLC (diamond like carbon) formed whichare formed by anodic oxidation can be used.

As is the case with the first conductive film, a film formed of amaterial which performs ohmic contact to a semiconductor film formedlater is used for the second conductive film.

Next, a resist mask is formed on the second conductive film, and thesecond conductive film and the second insulating film are etched intothe desired shape. As a result, the etched second conductive filmbecomes a second electrode 105. The second insulating film is providedso that a source electrode is not connected to a drain electrodeelectrically. In this step, it is desirable that a side surface of atleast the second insulating film is slanted to the surface of thesubstrate. According to this structure, the semiconductor film is formedwith high coatability, and the semiconductor film is prevented frombeing cut.

In addition, etching of the second insulating film is finished in theinterface at which the surface of the first electrode is exposed. As aresult, the etched second conductive film becomes the second electrode.

In addition, a channel-length of the semiconductor film formed later canbe controlled by controlling the film thickness of the second insulatingfilm. In this embodiment mode, the second insulating film with a filmthickness of from 10 nm to 100 nm is formed.

In addition, in this embodiment mode, after the second insulating filmand the second conductive film are formed sequentially, the secondconductive film and the second insulating film are etched at the sametime. However, instead of this step, the second insulating film may beformed and etched, and then, the second conductive film may be formedand etched into the desired shape in order to form the second electrode.In this case, the second conductive film is etched so that one part ofthe first electrode and the second insulating film is eventuallyexposed.

In addition, the first electrode or the second electrode can be formedby spraying a solution including electro conductive particles by adrop-wise spraying method represented with ink-jetting, and then bybaking for dryness.

Next, a semiconductor film 106 is formed at the side surface of thelamination layer comprising the first electrode, the etched secondinsulating film and the second electrode. The semiconductor film can beformed of a film including an inorganic material or an organic material,or a film including the inorganic material and the organic material.

A representative example of a semiconductor film formed of an inorganicmaterial includes a silicon film formed by CVD or the like, a siliconfilm added with gallium and the like. In addition, a representativeexample of a semiconductor film formed of an organic material includespolymer or an oligomer represented by conjugated polymer, for example,polyphenylenevinylene derivative, polyfluorene derivative, polythiophenederivative, polyphenylene derivative and copolymer thereof,oligophenylene, and oligothiophene. And these are formed by a wet methodsuch as spin coating, dip coating, ink-jet print, screen print, spraycoating, or the like. Further, pentacene, tetracene, copperphthalocyanine, fluorination phthalocyanine, perylene derivative aregiven for an example of a low molecular substance, and these are mainlyformed by vacuum deposition, however, electrolysis polymerization, orelectrolytic deposition may be used, too.

Next, after a third insulating film 107 and a third conductive film aresequentially formed on the entire surface of the substrate, the thirdconductive film is etched into the desired shape. In the etching step,it is important that a part of the semiconductor film which is at leastin contact with the second insulating film 104 is covered with the thirdconductive film. As a result, the third insulating film is to be a gateinsulating film, and the etched third conductive film is to be a gateelectrode 108.

As the third insulating film, a silicon oxide film, a silicon oxynitridefilm, and a silicon nitride film formed by sputtering or CVD, a siliconoxide film formed by thermal oxidation, a silicon oxide film formed byapplication (SOG: Spin on Glass), Boro-phosphosilicate Glass (BPSG),phosphosilicate Glass (PSG), a material (siloxane) in which a skeletonstructure is configured in bond with silicon (Si) and oxygen (O), andwhich at least includes hydrogen in the substituent, a material (polysilazane) including polymer having Si—N bond, polyvinyl alcohol (PVA),polymethyl methacrylate (PMMA), polystyrene (PS), poly vinylphenol,polyparaxylylene and the derivative, polyimide and the derivative,polyacrylonitrile, polymethyl methacrylate, polystyrene, poly phenolderivative, polyurea, polyethylene, polypropylene, polyvinyl chloride,polyvinylidene chloride, polyvinyl fluoride, polyvinylidene fluoride,polymer film such as cellulose acetate or the derivative, DLC (diamondlike carbon) and the like can be used. In this embodiment mode, thethird insulating film with a film thickness of from 50 nm to 130 nm islayered.

As the third conductive film, poly (3,4-ethylenedioxythiophene) (PEDOT)which is formed by ink-jetting, an element chosen from Ta, W, Ti, Mo,Al, Cu formed by a known technique such as CVD, sputtering, vapordeposition, or the like, a film formed of a alloy material or a compoundmaterial in which the aforementioned elements are in the maincomponents, or a semiconductor film represented by a polycrystallinesilicon film doped with an impurity element such as phosphorus can beused.

Next, a fourth insulating film 109 is formed on the entire surface ofthe substrate. For the fourth insulating film, an inorganic insulatingfilm (typically, a silicon oxide film, a silicon nitride film, and asilicon oxynitride film), and an organic insulating film (typically,polyimide, acryl, polyamide, polyimidamide, BCB (benzo cyclobutene)) canbe used. In the case of using the inorganic insulating film as thefourth insulating film, it is desirable that the surface is planarizedby polishing steps or the like.

Next, a contact hole 110 is formed in the fourth insulating film, and awiring 111 (second connection wiring) connecting with the secondelectrode are formed. In this embodiment mode, the second connectionwiring is to be a pixel electrode.

By the above-mentioned step, a TFT having an active region at the sideof the insulating film and a pair of conductive films provided throughthe insulating film can be formed. It is easier that the TFTmanufactured according to this embodiment mode controls thechannel-length by controlling the film thickness of the secondinsulating film. Because of this, a thin film transistor having ashorter channel-length can be manufactured in comparison with aconventional step since it becomes easier to control the channel-length.In other words, because it becomes easier to increase a W/L ratio, acurrent-voltage characteristic can be raised and the characteristic ofthe TFT can be improved.

Besides, because the first electrode and the second electrode areoverlapped with each other, the area occupied by the TFT can be reduced.When the TFT is used in the transmissive display device, an apertureratio can be raised.

Embodiment Mode 2

In this embodiment mode, a structure in which a second electrode extendsfrom a first connection wiring in Embodiment Mode 1 is described withreference to FIGS. 2A and 2B. In addition, FIG. 2A is a top view of aTFT manufactured according to this embodiment mode, and FIG. 2B is across-sectional view of the TFT.

At first, after a first insulating film 202 is formed on a substrate201, a first conductive film is formed. The first conductive film isetched into the desired shape to form a first electrode 203. The firstelectrode is connected to a second connection wiring 211 in thefollowing step. In this embodiment mode, the second connection wiringserves as a pixel electrode. The first insulating film and the firstconductive film can be formed of the same material and the same methodas those in Embodiment Mode 1.

Next, a second insulating film 204 and a second conductive film aresequentially formed on the first electrode. The second insulating filmand the second conductive film can be formed of the same material andthe same method as those in Embodiment Mode 1.

Next, a resist mask is formed on the second conductive film. The secondconductive film and the second insulating film are etched into thedesired shape, and a second electrode 205 is formed. At the same time,each the second insulating film 204 and the first electrode 203 isexposed partly. The same technique as that in Embodiment Mode 1 can beused in this step. In addition, in this embodiment mode, the secondconductive film is etched so that the first electrode 203 and the secondconnection wiring are connected. That is to say, the second conductivefilm is etched so that the first electrode includes at least a regionwhich is not covered with the second electrode. In addition, the secondelectrode 205 extends from a first connection wiring 212. In thisembodiment mode, the first connection wiring is to be a source wiring.

Next, a semiconductor film 206 is formed at the side surface of alamination layer comprising the first electrode, the etched secondinsulating film and the second electrode. The semiconductor film can beformed of the same material as that in Embodiment Mode 1.

Next, after a third insulating film 207 and a third conductive film aresequentially formed on the entire surface of the substrate, the thirdconductive film is etched into the desired shape in order to form a gateelectrode. In the etching step, it is important that the thirdconductive film covers a part of the semiconductor film at leastconnecting to the second insulating film. As a result, the thirdinsulating film 207 becomes a gate insulating film, and the etched thirdconductive film becomes a gate electrode 208.

Next, a fourth insulating film 209 is formed on the entire surface ofthe substrate. The third insulating film, the third conductive film anda fourth insulating film can be formed of the same material as that inEmbodiment Mode 1.

Next, a contact hole 210 is formed in the fourth insulating film, and awiring (second connection wiring) 211 connecting with the firstelectrode is formed. In this embodiment mode, the second connectionwiring serves as the pixel electrode.

By the above-mentioned step, a TFT having an active region at the sidesurface of the insulating film and the a pair of films provided throughthe insulating film can be formed. The channel-length of the TFTmanufactured according to this embodiment mode can be easily controlledby controlling the film thickness of the second insulating film. Becauseof this, a thin film transistor having a shorter channel-length thanthat in the conventional step can be manufactured because it becomeseasier to control the channel-length in comparison with a conventionalstep. In other words, it becomes easier to increase a W/L ratio, acurrent-voltage characteristic can be raised, and the characteristic ofthe TFT can be improved.

Besides, since the first electrode and the second electrode areoverlapped with each other, the area occupied by the TFT can be reduced.When the TFT is used in a transmissive display device, an aperture ratiocan be raised.

Embodiment Mode 3

In this embodiment mode, a method for manufacturing a TFT having aplurality of channel forming regions is described with reference toFIGS. 3A and 3B. FIG. 3A is a top view of a TFT manufactured accordingthis embodiment mode, and FIG. 3B is a cross-sectional view of the TFT.A connection method of a first connection wiring, a second connectionwiring, a first electrode and a second electrode is the same as that inEmbodiment Mode 1.

Firstly, after a first insulating film 302 is formed on a substrate 301as is the case with Embodiment Mode 1, a first conductive film isformed. After this, the first conductive film is etched into the desiredshape, and a first electrode 303 is formed. The first electrode extendsfrom a first connection wiring 314. In this embodiment mode, the firstconnection wiring is to be a source wiring.

Next, a second insulating film, a second conductive film, a thirdinsulating film and a third conductive film are layered on the firstelectrode sequentially. The second insulating film and the thirdinsulating film can be formed of the same material as that of the secondinsulating film in Embodiment Mode 1. The second conductive film and thethird conductive film can be formed of the same material as that of thefirst conductive film and the second conductive film in Embodiment Mode1.

Next, a resist mask is formed on the third conductive film, and thethird conductive film, the third insulating film, the second conductivefilm, and the second insulating film are etched into the desired shape.A second electrode 305 is formed from the second conductive film, and athird electrode 307 is formed from the third conductive film. Inaddition, etching is performed so that each the first electrode 303 andthe second electrode 305 is exposed partly. In addition, the etchingstep can be adapted to the step of etching the second insulating filmand the second conductive film in Embodiment Mode 1. Thus, a laminationlayer which is formed by laminating the conductive film and insulatingfilm alternately is formed.

Next, a semiconductor film 308 is formed at the side surface of thelamination layer comprising the first electrode 303, the etched secondinsulating film 304, the second electrode 305, the etched thirdinsulating film 306 and the third electrode 307. The semiconductor filmcan be formed of the same material as that in Embodiment Mode 1.

Next, after a fourth insulating film 309 and a fourth conductive filmare sequentially formed over the entire surface of the substrate, thefourth conductive film is etched into the desired shape to form a gateelectrode 310. In the etching step, it is important that a part of thesemiconductor film which is at least connected to the second insulatingfilm 304 and a part of the semiconductor film which is at leastconnected to the third insulating film 306 are covered with the gateelectrode 310. As a result, the fourth insulating film serves as a gateinsulating film,

Next, a fifth insulating film 311 is formed on the entire surface of thesubstrate.

Next, a contact hole 312 is formed in the fifth insulating film, and awiring (second connection wiring) 313 connecting to the second electrodeis formed. In this embodiment mode, the second connection wiring servesas a pixel electrode.

In this embodiment mode, an example of a TFT having two channel formingregions is shown, but it is not limited to this. Accordingly, a TFThaving an n−1 channel forming region can be manufactured. Specifically,n−1 layered insulating film and an n layered conductive film arealternately laminated, and a TFT wherein a semiconductor film, a gateinsulating film, and a gate electrode can be formed at the side surfaceof the lamination layer can be manufactured.

By the above-mentioned step, a TFT having an active region at the sidesurface of the lamination layer in which the insulating film and theconductive film are alternately laminated can be formed. By controllingthe film thickness of the second insulating film and the thirdinsulating film manufactured according to this Embodiment Mode, thechannel-length can be controlled. Since it becomes easier to control thechannel-length, a thin film transistor having a short channel-length canbe manufactured in comparison with a TFT manufactured in a conventionalstep. In other words, because it becomes easier to increase a W/L ratio,a current-voltage characteristic can be raised and the characteristic ofthe TFT can be improved. Because, in an active region, a plurality ofchannel forming regions are serially-connected and electric field at theinterface between a drain region and a channel forming region isrelaxed, off-state current can be reduced.

Because the first electrode, the second electrode and the thirdelectrode are overlapped with one another, the area occupied by the TFTcan be lowered. In addition, when the TFT is used in transmissivedisplay device, an aperture ratio can be raised.

The present embodiment mode can be applied to the TFT in Embodiment Mode1 or the TFT in Embodiment Mode 2.

Embodiment Mode 4

In this embodiment mode, a method for manufacturing a TFT having achannel forming region of closed contour shape is described withreference to FIGS. 4A and 4B. FIG. 4A is a top view of a TFTmanufactured according to this embodiment mode, and FIG. 4B is across-sectional view thereof. A structure where a first electrodeextends from a first connection wiring is described.

Firstly, a first insulating film 402 and a first conductive film aresequentially layered on a substrate 401 as is the case with EmbodimentMode 1. After this, the first conductive film is etched into the desiredshape to form a first electrode 403. The first electrode extends fromthe first connection wiring 412. In this embodiment mode, the firstconnection wiring is to be a source wiring. The first insulating filmand the first conductive film can be formed by using the same materialand the same method as those in Embodiment Mode 1.

Next, a second insulating film and a second conductive film aresequentially layered on the first conductive film. The second insulatingfilm and the second conductive film can be formed by using the samematerial and the same method as those in Embodiment Mode 1.

Next, a resist mask is formed on the conductive film, the secondconductive film and the second insulating film are etched into thedesired shape in order to form a second electrode 405. In the step, thesecond conductive film and the second insulating film are etched until apart of the first electrode is exposed. In this embodiment mode, thesecond insulating film and the second conductive film are preferablyetched into the similar shapes. By etching as described, the distancebetween the first electrode and the second electrode can be keptconstant in the part where a semiconductor film is formed later. Inother words, a channel forming region having an uniform channel-length(L) and a longer channel width (W) can be formed.

In this embodiment mode, after the second insulating film and the secondconductive film are sequentially formed, the second conductive film andthe second insulating film are etched at the same time. However, insteadof this step, after the second insulating film is formed, and etched,then the second conductive film may be formed and etched into a desiredshape in order to form the second electrode. For this case, the secondconductive film is etched so that each the first electrode and thesecond insulating film are finally exposed partly.

Next, a semiconductor film 406 is formed at the side surface of thelamination layer comprising the first electrode, the etched secondinsulating film 404 and the second electrode 405. The semiconductor filmcan be formed of the same material as that in Embodiment Mode 1. Afterthis, the central part in the semiconductor film is removed, and asemiconductor film having a closed contour shape seen from the above isformed.

Next, after sequentially forming a third insulating film 407 and a thirdconductive film on the entire surface of the substrate, the thirdconductive film is etched into the desired shape, thereby forming a gateelectrode 408. In the etching step, it is important that a part of thesemiconductor film connecting at least to the second insulating film iscovered with the third conductive film. In addition, the thirdinsulating film serves as a gate insulating film.

Next, a fourth insulating film 409 is formed on the entire surface ofthe substrate. In this embodiment mode, the third insulating film, thethird conductive film and the fourth insulating film can be formed ofthe same material as that in Embodiment Mode 1, respectively.

Next, a contact hole is formed in the fourth insulating film, and awiring (second connection wiring) 411 connecting to the second electrodeis formed. In the step, it is important that the contact hole is formedso as not to be in contact with the semiconductor film 406 and the gateelectrode 408. In other words, a contact hole is formed in the regionwhere the third insulating film 407 and the fourth insulating film 409are sequentially connected to the second electrode 405. In thisembodiment mode, the second connection wiring is to be a pixelelectrode.

According to the above-mentioned step, a TFT having an active region atthe side surfaces of the insulating film and the conductive film whichis laminated over the in insulating film can be formed. Thechannel-length of the TFT manufactured according to this embodiment modecan be controlled by controlling the film thickness of the secondinsulating film. A thin film transistor having a shorter channel-lengththan that in a conventional step can be manufactured since it becomeseasier to control the channel-length. In other words, because it becomeseasier to increase a W/L ratio, a current-voltage characteristic can beraised and the characteristic of the TFT can be improved. A channelforming region of the TFT formed in this embodiment mode has a shape ofclosed contour, so the channel-length can be shortened, and thechannel-width (W) can be increased at the same time. As a result, acurrent-voltage characteristic can be raised.

Since the first electrode and the second electrode are overlapped witheach other, the area occupied by the TFT can be lowered. When the TFT isused in a transmissive display device, an aperture ratio can be raised.

In addition, this embodiment mode can be applied to either of the TFT inEmbodiment modes 1 to 3.

Embodiment Mode 5

In this embodiment mode, a structure wherein each a first electrode anda second electrode makes contact areas with a semiconductor filmincreased and raises the each contact property is described. Thisembodiment mode is described with reference to the TFT structure inEmbodiment Mode 1. A similar symbol is used to the part which refers tothe same part, and description of the detail is omitted in the samepart. The present embodiment mode can be applied to the TFT inEmbodiment Mode 2, Embodiment Mode 4, or Embodiment Mode 6.

This embodiment mode is described with reference to FIGS. 11A to 11C.FIG. 11A is a top view of the TFT manufactured according to thisembodiment mode, FIG. 11B is a cross-sectional view of the TFT, and FIG.11C is an enlarged view of the first electrode, the second electrode andsemiconductor film of the TFT.

Firstly, after a first insulating film 102 is formed on a substrate 101,a first conductive film is formed. Then the first conductive film isetched into a desired shape, thereby forming a first electrode 1103.Incidentally, the first electrode extends from a first connection wiring112. In this embodiment mode, the first connection wiring is to be asource wiring.

Next, a second insulating film 104 and a second conductive film aresequentially layered on the first conductive film.

Next, a resist mask is formed on the second conductive film, and thesecond conductive film and the second insulating film 104 are etchedinto the desired shape. As a result, the etched second conductive filmbecomes a second electrode 105. The second insulating film is providedso as not to connect a drain electrode to a source electrodeelectrically.

In addition, after the second conductive film is etched into the desiredshape for forming the second electrode 105, the second insulating filmmay be etched into the desired shape.

Further, in the above mentioned step, a part of the first electrode isover etched as in FIG. 11C so that one part of the first electrode 1103is exposed. The exposed portion of the first electrode 1103 is increasedby taking such a step, the contact areas with the semiconductor filmformed later is increased, therefore the contact properties can beraised. In addition, accuracy of the channel-length can be raised.

In addition, the film thickness of the second insulating film becomesapproximately equal to the channel-length of the semiconductor film tobe formed later. In other words, the channel-length can be controlled bycontrolling the film thickness of the second insulating film. In thisembodiment mode, the second insulating film with a film thickness of 10nm to 100 nm is formed.

After the second insulating film and the second conductive film aresequentially formed, the second conductive film and the secondinsulating film are etched at the same time in this embodiment mode,however, instead of this step, the second insulating film may be formedand etched, then the second conductive film may be formed and etched soas to form the second electrode. In this case, the second insulatingfilm and the second conductive film are etched so that a part of thesecond insulating film is exposed and the first electrode is overetched.

Next, a semiconductor film 106 is formed at the side surfaces of thelamination layer comprising the first electrode, the etched secondinsulating film and the second electrode. The semiconductor film can beformed with a film including an inorganic material or an organicmaterial, or a film including an organic material and an inorganicmaterial.

Next, after a third insulating film 107 and the a conductive film aresequentially formed on the entire surface of the substrate, the thirdconductive film is etched into the desired shape. In the etching step,it is important that at least the part of the semiconductor film whichis in contact with the second insulating film 104 is covered with thethird conductive film. As a result, the third insulating film 107becomes a gate insulating film, and the etched third conductive filmbecomes a gate electrode 108.

Next, a fourth insulating film 109 is formed on the entire surface ofthe substrate. When an inorganic insulating film is used to the fourthinsulating film, the surface of the insulating film is preferablyplanarized by polishing step or the like.

Next, a contact hole 110 is formed in the fourth insulating film, and awiring 1111 (second connection wiring) connecting with the secondelectrode is formed. In this embodiment mode, a second connection wiringserves as a pixel electrode.

By the above-mentioned step, a TFT having an active region at the sidesurfaces of the insulating film and the conductive film laminated overthe insulating film can be formed. The TFT which can be manufactured inthis embodiment mode can raise a contact property than that inEmbodiment Mode 1 since the contact areas with the first electrode andthe semiconductor film can be increased as the second electrode. Inaddition, it is easier to control the channel-length by controlling afilm thickness of the second insulating film. Because of this, a thinfilm transistor having a shorter channel-length than that in aconventional step can be manufactured, since it becomes easier tocontrol the channel-length in comparison with a conventional step. Inother words, since it is easier to increase a W/L ratio, acurrent-voltage characteristic can be raised and the characteristic ofthe TFT can be improved.

Because the first electrode and the second electrode are overlapped eachother, the area occupied by the TFT can be lowered. When the TFT is usedin a transmissive display device, an aperture ratio can be raised.

Embodiment Mode 6

In this embodiment mode, a first electrode 1103 of a semiconductordevice as shown in embodiment mode 5 is described. Because one part ofthe first electrode 1103 is over etched as shown in FIG. 11C, the filmthickness of the central part differs from that of the edge portion.According to this structure, the contact areas with a semiconductor filmformed later is increased, and the contact property can be raised.

Embodiment Mode 7

In this embodiment mode, a structure of the TFT in which an area of theTFT can be further reduced is described using FIG. 12. This embodimentmode is described by using a structure of the TFT in Embodiment Mode 1.Accordingly, the same symbol is used to the part which refers to thesame, and description of the detail is omitted. In addition, thisembodiment mode can be applied to any one of the TFTs in Embodiment Mode2, Embodiment Mode 3, and Embodiment Mode 5.

According to a step in Embodiment Mode 1, a first insulating film 102, afirst electrode 103, a second insulating film 104, a second electrode105, a semiconductor film 106, and a third insulating film 107 areformed on a substrate.

After this, a third conductive film is formed and etched into thedesired shape, thereby forming a gate electrode 1208. In this case, onlya part of the semiconductor film formed over a channel forming region iscovered with a third conductive film. According to this structure, thearea occupied by the gate electrode is reduced. As a result, theaperture ratio of a pixel can be improved, while raising acurrent-voltage characteristic of the 1141.

Embodiment 1

Hereinafter, an embodiment of the present invention is described. Inthis embodiment, a method for manufacturing a TFT in an active matrixsubstrate of a liquid crystal display with the use of the TFT having thestructure of Embodiment Mode 1 and particularly, a method formanufacturing a TFT in a pixel portion is described with reference toFIG. 5A to FIG. 9B. In addition, FIG. 5A to FIG. 9A shows a top view ofa pixel portion of an active matrix substrate. Because an insulatingfilm is formed over the entire surface, the description is omitted. FIG.5A to FIG. 9B each shows cross sectional views of A-A′ in FIGS. 5A and5B, B-B′ in FIGS. 6A and 6B, C-C′ in FIGS. 7A and 7B, D-D′ in FIGS. 8Aand 8B, E-E in FIGS. 9A and 9B respectively.

At first, as shown in FIGS. 5A and 5B, a first conductive film is formedon a substrate 501 having an insulating surface. Then patterning andetching are performed, thereby forming source lines 502 and 503. Here, aglass substrate is used for the substrate 501 and a tungsten silicide(W—Si) film is used for source lines 502 and 503.

Subsequently, insulating films 503 a and 503 b for covering the sourcelines 502 and 503 are formed. Here, a silicon oxide film formed byplasma-CVD and an silicon oxide film formed by low pressure thermal CVDare laminated.

In addition, after forming the insulating film 503 b, the surface of theinsulating film may be planarized by process of chemical grinding andmechanical grinding (typically, CMP technique). For example theplanarization is performed so that the maximum height of the surface ofthe insulating film (R max) is to be equal to or less than 0.5 μm,preferably, equal to or less than 0.3 μm.

Subsequently, a resist mask is formed on the insulating film 503 b, andcontact holes 504 to 507 reaching the source line 502 are formed. Afterthis, the mask is removed.

Subsequently, the second conductive film is formed, and a resist mask isformed on the conductive film by known photolithography. After this, bya known method such as dry etching or wet etching, the second conductivefilm is etched, and source electrodes 508 to 511, which are the firstelectrodes are formed. Here, a source electrode formed of a tungstenfilm is formed by sputtering.

Next, as shown in FIGS. 6A and 6B, a silicon oxide film is formed with afilm thickness of 50 nm on source electrodes 508 to 511 and theinsulating film 503 b by low pressure thermal CVD. After forming thesilicon oxide film, a third conductive film is formed.

After a resist mask is formed on the third conductive film by knownphotolithography, drain electrodes 521 to 524, which are the secondelectrode are formed by dry etching. Here, as the third conductive film(second electrode), a tungsten film is layered by sputtering.

Next, a resist mask is formed on a drain electrode, a silicon oxide filmis etched by dry etching (522), and a part of the source electrodes 508to 511 which are covered with the third insulating film is exposed.Etching at this time is finished in the boundary section where sourceelectrodes 508 to 511 are exposed. In addition, the silicon oxide filmmay be removed and the source electrodes 508 to 511 may be over etchedin order to make the exposed portion of the source electrodes 508 to 511uniform.

Next, as shown in FIGS. 7A and 7B, a surface of the substrate is washed,and pretreatment such as UV cleaning is sufficiently performed, therebyforming semiconductor films 531 to 534. Here, in a vapor depositiondevice, pentacene that is an organic semiconductor material is formed byusing a meal mask at the side surface of the lamination layer comprisingthe first electrode, the third insulating film and the second electrodeand the side surface of the lamination layer where the first electrodeis exposed to.

As shown in FIGS. 8A and 8B, after a fourth insulating filmcorresponding to a gate insulating film 541 is formed over the entiresurface of the substrate, the third conductive film corresponding togate electrodes 542 and 543 are formed. Here, polyvinyl alcohol (PVA) isapplied by a spinner in aversion ambient atmosphere so as to form a gateinsulating film. Then, poly (3,4-ethylene dioxythiophene) (PEDOT) isdropped by ink-jetting so as to form a gate electrode. When the gateelectrode is formed, it is layered so as to at least cover the part ofthe semiconductor film contacting with the third insulating film.

As shown in FIGS. 9A and 9B, a fifth insulating film 551 is formed onthe entire surface of the substrate. Here, the fifth insulating film isformed after applying acrylic resin and performing prebake.

Next, contact holes 561 to 564 which connect with the second electrode(drain electrode) are formed by etching the fifth insulating film. Here,a resist mask is formed, and the fifth insulating film is etched by dryetching, thereby forming the contact holes. Next, after forming atransparent conductive film, here, an indium tin oxide (ITO) film,patterning is performed thereto so as to form pixel electrodes 552 to560.

An active matrix substrate of a liquid crystal display device accordingto the present invention can be formed by using the above steps. In thisembodiment, an example of manufacturing the active matrix substrate fora transmissive display device by using a transparent conductive film fora pixel electrode is described. However, a material film havingreflectivity may be used for the pixel electrode, and the active matrixsubstrate of reflective display device may be manufactured. In addition,only a manufacturing step of a pixel portion is described, but thepresent invention can be applied to a TFT constituting a drive circuit.Accordingly, a pixel portion and a drive circuit may be formed on thesame substrate at the same time according to the present invention.

In addition, a manufacturing step of the present invention can beapplied to the active matrix substrate of other display devices (ELdisplay device, field emission display device, cataphoresis displaydevice). Even more particularly, a manufacturing steps of the presentinvention can be applied to that of an IC tip formed of TFTs, anexternal drive circuit formed of namely TFTs, a memory, and the like.

Even more particularly, a structure of Embodiment Mode 1 is applied tothe structure of a TFT in the present embodiment. However, otherstructures such as described in Embodiment Modes 2 to 7 may be applied.

This application is based on Japanese Patent Application serial no.2003-076640 filed in Japan Patent Office on Mar. 19 in 2003, thecontents of which are hereby incorporated by reference.

Although the present invention has been fully described by way ofexample with reference to the accompanying drawings, it is to beunderstood that various changes and modifications will be apparent tothose skilled in the art. Therefore, unless otherwise such changes andmodifications depart from the scope of the present invention hereinafterdefined, they should be construed as being included therein.

What is claimed is:
 1. A semiconductor device comprising: a firstconductive film; a second conductive film over the first conductivefilm; a first insulating film interposed between the first conductivefilm and the second conductive film; a semiconductor film over the firstconductive film; a third conductive film over the semiconductor film;and a second insulating film interposed between the semiconductor filmand the third conductive film, wherein a whole of the semiconductor filmoverlaps with the first conductive film.
 2. The semiconductor deviceaccording to claim 1, wherein the semiconductor film has an opening. 3.The semiconductor device according to claim 1, wherein the thirdconductive film has an opening.
 4. The semiconductor device according toclaim 1, wherein the semiconductor film is interposed between the firstinsulating film and the second insulating film.
 5. The semiconductordevice according to claim 1, wherein the semiconductor film comprisesone of silicon and an organic material.
 6. A semiconductor devicecomprising: a first conductive film; a second conductive film over thefirst conductive film; a first insulating film interposed between thefirst conductive film and the second conductive film; a semiconductorfilm over the first conductive film; a third conductive film over thesemiconductor film; and a second insulating film interposed between thesemiconductor film and the third conductive film, wherein a whole of thesemiconductor film overlaps with the first conductive film, and whereina whole of the semiconductor film overlaps with the third conductivefilm.
 7. The semiconductor device according to claim 6, wherein thesemiconductor film has an opening.
 8. The semiconductor device accordingto claim 6, wherein the third conductive film has an opening.
 9. Thesemiconductor device according to claim 6, wherein the semiconductorfilm is interposed between the first insulating film and the secondinsulating film.
 10. The semiconductor device according to claim 6,wherein the semiconductor film comprises one of silicon and an organicmaterial.
 11. A semiconductor device comprising: a first conductivefilm; a second conductive film over the first conductive film; a firstinsulating film interposed between the first conductive film and thesecond conductive film; a semiconductor film over the first conductivefilm; a third conductive film over the semiconductor film; and a secondinsulating film interposed between the semiconductor film and the thirdconductive film, wherein a whole of the semiconductor film overlaps withthe third conductive film.
 12. The semiconductor device according toclaim 11, wherein the semiconductor film is in contact with a sidesurface of the first conductive film and a top surface of the firstconductive film, and wherein an angle between the side surface and abottom surface of the first conductive film is different from an anglebetween the top surface and the bottom surface.
 13. The semiconductordevice according to claim 11, wherein the second insulating film is incontact with a side surface of the first conductive film.
 14. Thesemiconductor device according to claim 11, wherein the semiconductorfilm is interposed between the first insulating film and the secondinsulating film.
 15. The semiconductor device according to claim 11,wherein the semiconductor film comprises one of silicon and an organicmaterial.
 16. A semiconductor device comprising: a first conductivefilm; a second conductive film over the first conductive film; a firstinsulating film interposed between the first conductive film and thesecond conductive film; a semiconductor film over the first conductivefilm; a third conductive film over the semiconductor film; a secondinsulating film interposed between the semiconductor film and the thirdconductive film, a third insulating film over the third conductive film;and a fourth conductive film over the third insulating film, the fourthconductive film electrically connected to the first conductive filmthrough an opening of the third insulating film, wherein a whole of thesemiconductor film overlaps with the third conductive film.
 17. Thesemiconductor device according to claim 16, wherein the semiconductorfilm is in contact with a side surface of the first conductive film anda top surface of the first conductive film, and wherein an angle betweenthe side surface and a bottom surface of the first conductive film isdifferent from an angle between the top surface and the bottom surface.18. The semiconductor device according to claim 16, wherein the secondinsulating film is in contact with a side surface of the firstconductive film.
 19. The semiconductor device according to claim 16,wherein the semiconductor film is interposed between the firstinsulating film and the second insulating film.
 20. The semiconductordevice according to claim 16, wherein the semiconductor film comprisesone of silicon and an organic material.
 21. The semiconductor deviceaccording to claim 16, wherein the fourth conductive film is a pixelelectrode.
 22. A semiconductor device comprising: a first conductivefilm; a second conductive film over the first conductive film; a firstinsulating film interposed between the first conductive film and thesecond conductive film; a semiconductor film over the first conductivefilm; a third conductive film over the semiconductor film; a secondinsulating film interposed between the semiconductor film and the thirdconductive film, a third insulating film over the third conductive film;and a fourth conductive film over the third insulating film, the fourthconductive film electrically connected to the second conductive filmthrough an opening of the third insulating film, wherein a whole of thesemiconductor film overlaps with the third conductive film.
 23. Thesemiconductor device according to claim 22, wherein the semiconductorfilm is in contact with a side surface of the first conductive film anda top surface of the first conductive film, and wherein an angle betweenthe side surface and a bottom surface of the first conductive film isdifferent from an angle between the top surface and the bottom surface.24. The semiconductor device according to claim 22, wherein the secondinsulating film is in contact with a side surface of the firstconductive film.
 25. The semiconductor device according to claim 22,wherein the semiconductor film is interposed between the firstinsulating film and the second insulating film.
 26. The semiconductordevice according to claim 22, wherein the semiconductor film comprisesone of silicon and an organic material.
 27. The semiconductor deviceaccording to claim 22, wherein the fourth conductive film is a pixelelectrode.